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All indications point towards the Samsung Galaxy S23 FE launch being slated for later this year with Snapdragon and Exynos chipsets meant for different markets.
According to details that have been revealed through a new Geekbench listing, the device with model number SM-S7711U1 features a motherboard with the codename "taro." This could be Qualcomm's Snapdragon 8 Gen 1 or an underclocked version of the Snapdragon 8+ Gen 1 chipset with a peak clock speed of 3.0GHz.
The "U1" in the model number indicates that the phone is meant for North American markets, that is, US and Canada. The phone managed to reach a multi-core score of 3,718 and a single-core score of 1,549.
On the other hand, we earlier reported how the phone was spotted with SM-S711B model number and Samsung's Exynos 2200 chipset on Geekbench. This model number is usually for other global markets excluding the brand's home country, South Korea. Both listings have also confirmed 8GB RAM for the upcoming phone. It is possible that the phone could still launch with a Snapdragon chipset in India if we spot any indications of a third "SM-S711E" model.
While the exact chipset model remains in question, the recently launched Nothing Phone (2) features a similarly underclocked version of Snapdragon 8+ Gen 1. Compared to Samsung-fabricated Snapdragon 8 Gen 1, 8+ Gen 1 is benefitted with much better efficiency thanks to TSMC's 4nm process.
Samsung India recently brought Snapdragon 888 variant of its Galaxy S21 FE smartphone to the country. We expect to see the Samsung Galaxy S23 FE in the coming months as we first eagerly await the global launch of the new Galaxy Z Flip 5 and Fold 5 smartphones on 26th July in Seoul.